View FPD1000AS_1241313.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FPD1000AS
1W PACKAGED POWER PHEMT * PERFORMANCE (1.8 GHz) 31 dBm Output Power (P1dB) 15 dB Power Gain (G1dB) 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Design Data Available on Website Suitable for applications to 5 GHz DESCRIPTION AND APPLICATIONS
SEE PACKAGE OUTLINE FOR MARKING CODE
*
The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers. * ELECTRICAL SPECIFICATIONS AT 22C
Parameter Power at 1dB Gain Compression Power Gain at dB Gain Compression Maximum Stable Gain S21/S12 Power-Added Efficiency at 1dB Gain Compression 3 -Order Intermodulation Distortion S and L tuned for Optimum IP3 Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistivity (channel-to-case)
Phone: +1 408 850-5790 Fax: +1 408 850-5766
rd
Symbol P1dB G1dB MSG PAE IM3
Test Conditions VDS = 10V; IDS = 200 mA S and L tuned for Optimum IP3 VDS = 10V; IDS = 200 mA S and L tuned for Optimum IP3 VDS = 10 V; IDS = 200mA PIN = 0dBm, 50 system VDS = 10V; IDS = 200 mA S and L tuned for Optimum IP3 VDS = 10V; IDS = 200 mA POUT = 19 dBm (single-tone level)
Min 30 13.5
Typ 31 15.0 20 50
Max
Units dBm
RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL
dB %
-46 480 650 1100 720 20 0.7 6 20 0.9 8 22 25 50 1.4 800
dBc mA mA mS A V V V C/W
IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| CC
VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS +1 V VDS = 1.3 V; VGS = 0 V VGS = -3 V VDS = 1.3 V; IDS = 2.4 mA IGS = 2.4 mA IGD = 2.4 mA See Note on following page
http:// www.filtronic.co.uk/semis
Revised: 05/26/05 Email: sales@filcsi.com
FPD1000AS
1W PACKAGED POWER PHEMT * RECOMMENDED OPERATING BIAS CONDITIONS Drain-Source Voltage: From 5V to 10V Quiescent Current: From 25% IDSS to 55% IDSS ABSOLUTE MAXIMUM RATINGS1
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power
2
*
Symbol VDS VGS IDS IG PIN TCH TSTG PTOT Comp.
3
Test Conditions -3V < VGS < +0V 0V < VDS < +8V For VDS > 2V Forward / Reverse current Under any acceptable bias state Under any acceptable bias state Non-Operating Storage See De-Rating Note below Under any bias conditions
Min
Max 12 -3 IDSS +20/-20 575 175
Units V V mA mA mW C C W dB %
Channel Operating Temperature Storage Temperature Total Power Dissipation Gain Compression
1
-40
150 6.0 5
Simultaneous Combination of Limits 2 or more Max. Limits 80 2 TAmbient = 22C unless otherwise noted Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes: * Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device. * Total Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where: PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power * Total Power Dissipation to be de-rated as follows above 22C: PTOT= 3.5 - (0.04W/C) x TPACK where TPACK = source tab lead temperature above 22C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 55C source lead temperature: PTOT = 6.0 - (0.04 x (55 - 22)) = 4.68W * For optimum heatsinking, metal-filled through (Source) via holes should be used directly below the central metallized ground pad on the bottom of the package. * Note on Thermal Resistivity: The nominal value of 25C/W is measured with the package mounted on a large heatsink with thermal compound to ensure adequate (unsoldered) contact. The package temperature is referred to the Source leads.
*
HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. This product has be tested to Class 1A (> 250V but < 500V) using JESD22 A114, Human Body Model, and to Class A, (< 200V) using JESD22 A115, Machine Model.
Phone: +1 408 850-5790 Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Revised: 05/26/05 Email: sales@filcsi.com
FPD1000AS
1W PACKAGED POWER PHEMT
*
BIASING GUIDELINES Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for additional information. Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices such as the FPD1000AS. Self-biased circuits employ an RF-bypassed Source resistor to provide the negative Gate-Source bias voltage, and such circuits provide some temperature stabilization for the device. A nominal value for circuit development is 3.25 for the recommended 200mA operating point. The recommended 200mA bias point is nominally a Class AB mode. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point.
*
PACKAGE OUTLINE AND RECOMMENDED PC BOARD LAYOUT (dimensions in millimeters - mm)
PACKAGE MARKING CODE
Example: f1ZD P1F
f = Filtronic 1ZD = Lot / Date Code P1F = Status, Part Code, Part Type
All information and specifications subject to change without notice. Phone: +1 408 850-5790 Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Revised: 05/26/05 Email: sales@filcsi.com
FPD1000AS
1W PACKAGED POWER PHEMT * TYPICAL RF PERFORMANCE (VDS = 10V IDS = 200mA f = 1800 MHz):
Power Transfer Characteristic
3.50 31.00 3.00 29.00 2.50 27.00
25.00 23.00 21.00 19.00 17.00 15.00 0.00
2.00
1.50
Pout
Comp Point
1.00
.50
.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
-.50 18.00
Input Power (dBm)
Drain Efficiency and PAE
70.00% 70.00%
60.00%
60.00%
PAE (%)
40.00%
PAE
Eff.
40.00%
30.00%
30.00%
20.00%
20.00%
10.00%
10.00%
.00% 0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
.00% 18.00
Input Power (dBm)
Phone: +1 408 850-5790 Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Revised: 05/26/05 Email: sales@filcsi.com
Drain Efficiency (%)
50.00%
50.00%
Gain Compression (dB)
Output Power (dBm)
FPD1000AS
1W PACKAGED POWER PHEMT
IM Products vs. Input Power
-15.00 27.00 -20.00
Output Power (dBm)
25.00
-25.00
Pout
23.00
Im3, dBc
-30.00
-35.00
21.00
-40.00
-45.00 19.00 -50.00
17.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00
-55.00 12.00
Input Power (dBm)
Note: Graph above shows Input and Output power as single carrier or single-tone levels.
FPD1000AS IP3 CONTOURS 1800 MHz
0.6
Swp Max 222
2. 0
0.8
1.0
10.0
0.4
0.6
0.8
1.0
2.0
3.0
4.0
0.2
5.0
0
-0. 6
-2
.0
- 0.8
Phone: +1 408 850-5790 Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
-1.0
-3 .0
NOTE: IP3 contours generated with PIN4 = 11dB . -0 back-off from P1dB. Local maxima for best linearity located at: L = 40 + j55 and L = 113 + j70 with S = 15 + j12
Swp Min 1
Revised: 05/26/05 Email: sales@filcsi.com
- 5.0
- 0.2
-10.0
-4. 0
0.2
48 dBm 46 dBm 44 dBm 42 dBm 40 dBm
0 3.
4.0
5.0
10.0
IM Products (dBc)
0. 4
FPD1000AS
1W PACKAGED POWER PHEMT
FPD1000AS POWER CONTOURS 1800 MHz
0.8 0.6 2.0 0.4 1.0
Swp Max 215
28 dBm 29 dBm 30 dBm
3.0 4.0 5.0
0.2
31 dBm 32 dBm
10.0 2.0 3.0 4.0 5.0 10. 0
0
0.2
0.4
0.6
0.8 1.0
-10.0 -0.2 -5.0
-0.4 0.6
NOTE: -4.0 Power contours measured at constant input power, level set to meet -3.0 nominal P1dB rating at optimum match point. Optimum match: S = 3 - j2 and L = 25 + j5 2.0
0.8 1.0
Swp Min 1
FPD1000AS I-V Curves
.800 .700 Drain-Source Current (A) .600 .500 .400 .300 .200 .100 .000 0.00 VGS = -1.0V VGS = -1.25V 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 VGS = -0.5V VGS = -0.25V VGS = 0V
VGS = -0.75V
Drain-Source Voltage (V)
Phone: +1 408 850-5790 Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Revised: 05/26/05 Email: sales@filcsi.com
FPD1000AS
1W PACKAGED POWER PHEMT * RF PERFORMANCE OVER FREQUENCY:
FPD1000AS at VDS = 10V and IDS = 200mA
30.0
25.0
20.0
Ga in 15.0 S21 MSG
10.0
5.0
0.0 0 500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
FPD1000AS WCDMA ACPR 1900 MHz DOWNLINK Pk/Avg = 9dB 0.01%
40 30 -10 20 10 -20 0
Output Power (dBm)
-30
-10 -20 -30 -40 -60 -50 -60 3 4 5 6 7 8 9 10 11 12 13 14 -70
Output Power ACPR (5 MHz) ACPR (10MHz)
-40
-50
Input Power (dBm)
Phone: +1 408 850-5790 Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Revised: 05/26/05 Email: sales@filcsi.com
ACPR (dBc)
0
FPD1000AS
1W PACKAGED POWER PHEMT * STANDARD EVALUATION BOARD (1.70-1.85 GHZ): See Website for complete list of Evaluation Boards
VGG -0.5V VDD = +10V
C6 C8 R2 C5 C7 L2 C9 L1 C1 R1 C2 Q1 C4
RF INPUT
RF OUTPUT
NOTE: AutoCAD drawing available on Website. (Model EL-BD-000011-006-A) BILL OF MATERIALS
Designator C1 C2 C3 C4 C5 C6 C7 C8 C9 L1 L2 R1 R2 Q1 Manufacturer's Part Number ATC600S3R9CW250 ATC600S5R6CW250 ATC600S330JW250 ATC600S330JW250 T491B105M035AS7015 ATC600S680JW250 T491B105M035AS7015 ATC600S2R0BW250 0604HQ-1N1 0604HQ-1N1 RCI-0402-27R0J RCI-0603-12R0J FPD1000AS PC-SP-000010-006 TF-SP-000012 142-0711-841 AMP-103185-2 TF-SP-000003 Description Capacitor, 3.9 pF, 0603, ATC 600, tol. +0.25pF Capacitor, 5.6 pF, 0603, ATC 600, tol. +0.25pF Deleted Capacitor, 33 pF, 0603, ATC 600, tol. +5% Capacitor, 33 pF, 0603, ATC 600, tol. +5% Capacitor, 1 mF, SMD-B, Kemet, tol. +20% Capacitor, 68 pF, 0603, ATC 600 Capacitor, 1 mF, SMD-B, Kemet, tol. +20% Capacitor, 2 pF, 0603, ATC 600, tol. +0.1pF Inductor, 1.1 nH, Coilcraft High Q Surface Inductor, 1.1 nH, Coilcraft High Q Surface Resistor, 27 W, 0402, IMS, tol. +5% Resistor, 12 W, 0603, IMS, tol. +5% 1w Packaged Power pHEMT, Filtronic PCB, Rogers R04003, 0.012"(0.3mm), 0.5oz. Cu Carrier Connector, RF, SMA End Launch, Jack Assy, Connector, DC, 0.100 on center, 0.025 sq. posts, Center Block for P100 Package Screw, #0-80 Quantity 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 1 8
NOTE: 10-12 mil (0.3mm) plated thru vias used; vias under Q1 should be filled with Dupont CB100 conductive via plugging material in order to achieve optimal heatsinking. http:// www.filtronic.co.uk/semis
Phone: +1 408 850-5790 Fax: +1 408 850-5766
Revised: 05/26/05 Email: sales@filcsi.com

▲Up To Search▲

Price & Availability of FPD1000AS

	To Download FPD1000AS Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .